Vishay Intertechnology Inc. (NYSE: VSH) has introduced two new 1200-volt silicon carbide MOSFET power modules designed to ...
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency ...
Investing.com -- Vishay Intertechnology Inc (NYSE:VSH) stock climbed 3.2% Wednesday after the company introduced two new 1200 ...
The Vishay Semiconductors VS-MPY038P120 and VS-MPX075P120 combine the latest SiC technology with a rugged transfer mould ...
A new generation of 1200 V SiC power modules delivers higher efficiency, lower EMI and improved thermal reliability for EV ...
Wide-bandgap (WBG) power semiconductors—and silicon-carbide (SiC) devices in particular—can help significantly improve the energy efficiency and reliability of various types of power converters. These ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...
Silicon carbide (SiC) unipolar semiconductors are in wide commercial use, but their operations are limited by a trade-off relationship between breakdown voltage and specific resistance of the drift ...
Introducing a vertical arrangement of n and p layers into the drift layer of semiconductors to enable bipolar operation is a way around the 'unipolar limit' problem in semiconductors. But defect ...
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