Deep vertical holes and re-entrant features challenge the best metrology methods.
The 74ABT00 is a quad 2-input NAND gate. This device is fully specified for partial power down applications using Ioff. The Ioff circuitry disables the output, preventing the potentially damaging ...
A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.
The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...
TL;DR: Samsung Electronics has developed a 400-layer NAND technology, surpassing SK hynix's 321-layer NAND. This positions Samsung as a leader in NAND flash technology. The 400-layer NAND will enter ...
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