EDN

Intel crafts transistor with 20-nm gate length

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
Ars Technica

A transistor made using two atomically thin materials sets size record

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...
EDN

IMEC aims at 20-nm transistors with metal-gate project

LEUVEN, Belgium — IMEC, a process technology and EDA research organization, has extended its collaborative research program on high-k dielectrics to include the implementation of metal gate stacks in ...
Semiconductor Engineering

2D Semiconductors Make Progress, But So Does Silicon

Semiconductor industry researchers have been anticipating the need for better transistor channel materials to replace silicon for a long time, but silicon devices have continued to improve enough to ...
Electronic Design

Advanced 90-nm Process Packs 400 Million Transistors On-Chip

With over 400 million transistors on a single chip, Texas Instruments' next-generation 90-nm (0.09-µm) CMOS process will enable TI to pack DSP, microcontroller, memory, logic, analog, and RF functions ...
Nanowerk

Next-gen 3D transistors transform energy-efficient electronics

Researchers unveil 3D transistors using 2D semiconductors, enabling energy-efficient, high-performance electronics with unprecedented miniaturization. (Nanowerk News) In a significant advancement for ...